top of page

E Beam Evaporator

RS mapping

MgO Process

Glow discharge (Option)

Process Condition

image.png
image.png
  • MgO on glass substrate

  • Deposition temperature :100 ℃

  • Thickness : 5000Å

  • Deposition rate : 3 Å/s

Ni deposition test

image.png
image.png

Sample surface cleaning by Plasma (option)

  • Improve film adhesion and quality

image.png
image.png

Process D (ITO + Conventional Dome)

  • ITO (density 7.18) Evaporation + Heating

image.png
image.png
16109586719.jpg

SEE - 5

SPECIFICATIONS
  • Deposition materials : Metal : Ag, Al, Au, Cu, Sn, Ti, Pt, Ge, Ni, Au,..
                                          Oxide : SiO2, TiO2, Al2O3, Ta2O5,…
                                          TCO : ITO,…

  • Substrate size : Max. 8 inch

  • Product yield : 5 wafers/run@4inch, 3 wafers/run@6inch

  • Lamp heater : Max. 200℃

  • E-beam gun : 15ccx6pk , 25ccx4pk or 7cc*4pk

  • E-beam power supply : 6KW or 10KW

  • Pocket selector : 6 pocket indexer

  • Beam sweep controller : Digital sweep control

  • Thickness controller : Single Q’tz crystal sensor & controller

  • Ultimate pressure : < 5.0E-7 Torr (Cryo pump or TMP)

  • Control : PC control (UPRO software)

  • Option : Loadlock chamber, Ion source, substrate cooling- tilting & rotation

  • Dimension : (W*D*H)1,010mm X 1,460mm X 1,790mm

16109593949.jpg

SEE - 7

SPECIFICATIONS
  • Deposition materials : Metal : Ag, Al, Au, Cu, Sn, Ti, Pt, Ge, Ni, Au,..
                                          Oxide : SiO2, TiO2, Al2O3, Ta2O5,…
                                          TCO : ITO,…

  • Substrate size : Max. 8 inch

  • Product yield : 22 wafers/run@4inch, 9 wafers/run@6inch, 3 wafers/run@8inch

  • Lamp heater : Max. 200℃

  • E-beam gun : 40ccx4pk, 25ccx4pk, 15ccx6pk or 7cc*4pk

  • E-beam power supply : 6Kw , 10Kw OR 15Kw

  • Pocket selector : 6 pocket indexer

  • Beam sweep controller : Digital sweep control

  • Thickness controller : Single Q’tz crystal sensor & controller

  • Ultimate pressure : < 5.0E-7 Torr (Cryo pump or TMP)

  • Control : PC control (UPRO software)

  • Option : Dual electron gun, Ion source, Planetary dome, Double or 6 crystal sensors

  • Dimension : (W*D*H)1,010mm X 1,460mm X 1,790mm

16109598833.jpg

SEE - UHV

SPECIFICATIONS
  • Deposition materials : Metal : Ag, Al, Au, Cu, Sn, Ti, Pt, Ge, Ni, Au,..
                                          Oxide : SiO2, TiO2, Al2O3, Ta2O5,…

  • Substrate size : Max. 4 inch

  • Product yield : 1 wafers/run@4inch

  • E-beam gun : 6ccx4pk

  • E-beam power supply : 6Kw

  • Pocket selector : 4 pocket indexer

  • Beam sweep controller : Digital sweep control

  • Thickness controller : Single Q’tz crystal sensor & controller

  • Ultimate pressure : < 2.0E-9 Torr (Cryo pump )

  • Loadlock Chamber Pressure : < 5.0E-6 Torr (TMP )

  • Control : PC control (UPRO software)

  • Option : Ion source, Sputter gun, substrate cooling- tilting & rotation, Substrate temperature                         max. 700℃

  • Dimension : 3,000mm X 800mm X 1,700mm

SolidBase Technology. All Rights Reserved © 2025

Connect with us

  • facebook
  • LinkedIn
  • twitter
  • Instagram
  • youtube
bottom of page