PECVD
Thickness 2um SiO2 deposition process
Process Data (SiO2)
Process Data (Si3N4)
Reflective Index of si3N4 film (@SiH4 80sccm : NH3 gas variation)
Wet etching data of Si3N4 film (@temperature variation)
Deposition rate & Uniformity of SiO2 film (@ N2O gas variation)
Deposition rate & Uniformity of SiO2 film (@ RF gas variation)
6 inch Si wafer
COSMOS - 150
SPECIFICATIONS
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Deposition materials : SiO2, Si3N4, Poly Si, n+ doped poly, p+ doped poly,..
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Substrate size : Max. 8 inch
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Product yield : Piece to 8inch 1 wafer/ run, 3 wafers/run@4inch
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Substrate heater : > 400℃
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Plasma power : 2Kw@13.56MHz
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Pressure control : Throttle valve with baratron gauge (F. S. 10 Torr)
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Ultimate pressure : < 5.0E-3 Torr
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Vacuum pump : Dry pump
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Control : PC control (UPRO software)
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Option : TMP
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Dimension (W*D*H) : 1,006mm X 875mm X 1,145mm
COSMOS - L200
SPECIFICATIONS
-
Deposition materials : SiO2, Si3N4, Poly Si, n+ doped poly, p+ doped poly,..
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Substrate size : Max. 8 inch
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Product yield : Piece to 8inch 1 wafer/ run, 3 wafers/run@4inch
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Substrate heater : > 400℃
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Plasma power : 600W@13.56MHz or 1Kw
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Pressure control : Throttle valve with baratron gauge (F. S. 10 Torr)
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Ultimate pressure : < 5.0E-3 Torr
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Loadlock Chamber : < 5.0E-3 Torr
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Vacuum pump : Dry pump
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Control : PC control (UPRO software)
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Option : TMP, Cassette type loadlock
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Dimension (W*D*H) : 1,452mm X 900mm X 1,390mm
COSMOS - ICP
SPECIFICATIONS
-
Deposition materials : SiO2, Si3N4, Poly Si, n+ doped poly, p+ doped poly,..
-
Substrate size : Max. 8 inch
-
Product yield : Piece to 8inch 1 wafer/ run, 3 wafers/run@4inch
-
Substrate heater : > 400℃
-
Plasma power : 600W@13.56MHz or 2Kw
-
Pressure control : Throttle valve with baratron gauge (F. S. 10 Torr)
-
Ultimate pressure : < 5.0E-3 Torr
-
Loadlock Chamber : < 5.0E-3 Torr
-
Vacuum pump : Dry pump or Rotary pump
-
Control : PC control (UPRO software)
-
Option : TMP, Cassette type loadlock
-
Dimension (W*D*H) : 2,050mm X 800mm X 1,600mm