Process : Metal : Ru, Ti, Co, …
                Oxide : Al2O3 , HfO2, TiO2, SnO2, NiOx , ZnO, ZrO, SiO2,RuO,...
                Nitride : TiN, TaN,..

Substrate Size : Piece to Max. 12 inch

Source injection : Dual type showerhead

Substrate heater temperature : RT to Max. 450℃ (@ wafer)

No of precursor canister : Up to 4 sets

Canister heating : RT to 150℃

RF power : 600W @13.56Mhz

Ultimate pressure : ≤ 5.0×10-3 Torr

Pump : Dry pump or Rotary pump

Loadlock chamber : 1 wafer to Max. 10 wafers

Gas Supply : 3 channels (Extensible)

Deposition uniformity : ≤ ±3 %

System control : PC control (UPRO software)

Option : Canister temperature 200℃, Cassette type loadlock

Dimension : (w*d*h)2,000mm*650mm*1,400mm