ASHER
Process Data (EURA-200)
< Process condition –(@ CCP type and Rotary pump) >
STRIP PROCESS
EURA - W
SPECIFICATIONS
-
Process : Ashing, Descum, PR strip, Plasma cleaning,…
-
Substrate Size : Piece to Max. 12 inch
-
Source injection : Two pattern showerhead
-
Substrate temperature : Cooling or Max. 300℃ (@ wafer)
-
RF power : 2KW @13.56Mhz
-
Ultimate pressure : < 5.0×10-3 Torr
-
Pump : Dry pump or Rotary pump
-
Gas Supply : Ar, O2,..etc
-
Deposition uniformity : ≤ ±5 %
-
System control : PC control
-
Dimension (w*d*h) : 800mm*800mm*1,150mm
EURA - D
SPECIFICATIONS
-
Process : Ashing, Descum, PR strip, Plasma cleaning,…
-
Substrate Size : 500mm * 500mm
-
Source injection : Two pattern showerhead
-
Substrate temperature : Cooling or Max. 300℃ (@ wafer)
-
RF power : 2KW @13.56Mhz
-
Ultimate pressure : < 5.0×10-3 Torr
-
Pump : Dry pump or Rotary pump
-
Gas Supply : Ar, O2,..etc
-
Deposition uniformity : ≤ ±5 %
-
System control : PC control
-
Dimension (w*d*h) : 1,200mm*1,000mm*1,150mm
EURA - C
SPECIFICATIONS
-
Process : Ashing, Descum, PR strip, Plasma cleaning,…
-
Substrate Size : 3D material to 1 Cassette type (@ Max. 8inch)
-
Source injection : Shower nozzle
-
Substrate temperature : RT
-
RF power : 2KW @13.56Mhz
-
Ultimate pressure : < 5.0×10-3 Torr
-
Pump : Dry pump or Rotary pump
-
Gas Supply : Ar, O2, CF4,..etc
-
System control : PC control
-
Dimension (w*d*h) : 650mm*750mm*1,600mm