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CRYSTAL SI SOLARCELL

6inch Si solar cell Al BSF SEM

Line Configuration

Wet Bench (SOLTEX)

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Substrate Thermal Process device

Substrate Thermal Process device

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SOLTEX

SPECIFICATIONS
  • Configuration : Loader
    → Pre-cleaning bath → DI rinse #1
    → KOH bath → DI rinse #2
    → Acid #1 → DI rinse #3
    → Acid #2 → DI rinse #4
    → Hot DI rinse → Hot air dry
    → Unloader

  • Substrate size : 156mm×156mm wafer

  • Cassette (LSC) : Max. 100 wafers loading

  • LSC transfer : Robot

  • System control : Automatic process control by PC

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SOLDOP

SPECIFICATIONS
  • Frame structure : 1 stack 1 tube type

  • Substrate size : 156mm×156mm wafer

  • Process tube : Ball-joint type Quartz reactor

  • Load station : Automatic loading/unloading by LM guide (Soft landing type)
                            Max. 400 wafers loading (included dummy wafers)

  • Furnace heater : Max. 1,200℃ (at heater surface)
                                 6-zone temperature control

  • Process gas : N2, O2 gas for process
                           N2 gas for source carrier
                           N2 gas for purge

  • Source : 500cc Quartz canister for POCl3 source feeding

  • System control : Automatic process control by PC

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SOLISO

SPECIFICATIONS
  • Substrate holder capacity : 156mm×156mm 300 wafers

  • Chamber material : Stainless steel

  • Plasma source power : 600W, 13.56MHz (RF)

  • Vacuum pump : 33m3/hr, Fomblin oil type

  • Process gas : O2, CF4 gas for process
                           N2 gas for purge

  • System control : Automatic process control by PC

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SOLARC

SPECIFICATIONS
  • Configuration : Load table – Load chamber – Process chamber
    – Unload chamber – Unload table

  • Tray capacity : 156mm×156mm wafer 9 wafers

  • Load chamber : IR lamp pre-heating unit , 350℃

  • Process chamber : PE type showerhead
                                    Substrate heater , Max. 400℃

  • Unload chamber : Cooling unit

  • Transport unit : Motor

  • Plasma source power : 3KW , 13.56MHz (RF)

  • Vacuum pump : Load chamber – 500m3/hr Booster + 80m3/hr Rotary pump
    Process chamber – 600m3/hr Booster + 80m3/hr Dry pump
    Unload chamber – 500m3/hr Booster + 80m3/hr Rotary pump

  • Process gas : SiH4, NH3, N2 gas for process
                           N2 gas for purge

  • System control : Automatic process control by PC

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SOLIND

SPECIFICATIONS
  • Configuration : 5 heating zone
                               1 cooling zone

  • Heat turnel length : Max. 2,000 mm

  • Heater typeInstant :  Response Open Coil

  • Max. temperature : Max. 350℃

  • Cold Start Warm-Up Time : 30 min.

  • Profile Change Time : 5~10 min.

  • Belt type : 6inch stand-up mesh belt

  • Conveyor Speed : Dual Speed (13~80cm/min, 80~480cm/min) with toggle switch

  • UPS : Battery Backup for Conveyor and PC

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SOLFIR

SPECIFICATIONS
  • Configuration : Loader station
    Multi-zone infrared drying section
    Multi-zone infrared firing section
    Two stage cooling
    Unloader station

  • Maximum continuous operating temperature : Firing section – 1000 deg.

  • Cross belt temperature uniformity and repeatability : ± 2 deg.

  • Temperature ramping rate : Max. 200 deg./sec

  • Belt speed : 26-300 ipm (66-762 cm/min)

  • Additional options included : VOC Oxidizer
    Upgrade to Edge Contact Belt for 156mm wafers
    Ultrasonic Belt Cleaner
    Critical Spare Parts Kit

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