LPCVD & FURNACE
Horizontal LPCVD/Furnace System
Horizontal LPCVD/Furnace System
300mm Wet oxidation process
Poly-Si SEM data
6 Inch Silcon Wafer SiO2 deposition(LTO)
LTO
Vertical LPCVD/Furnace System
N+Poly/SiO2/Si substrate(p-type) C-V measurement
Poly 250nm,650oC,SiH4/PH3=18/5,30min deposition test
PYRO - V
SPECIFICATIONS
-
Applications : SiO2, Si3N4, Poly Silicon , doped(N+, P+) ploy Silicon.. deposition
Low stress nitride film
LTO/HTO deposition
Wet /Dry oxidation
Diffusion(N+, P+) , Drive-in
Anneal -
Substrate size : 4 to max. 12 inch wafer
-
Product yield : Max. 50 wafers/ run
-
Heater temperature : Max. 1,250℃
-
Heater control zone : 1 zone to 3 zone
-
Load station : Robot or cassette
-
Ultimate pressure : < 5.0E-3 Torr
-
Vacuum pump : Dry pump or Rotary pump
-
Control : PC control (UPRO software)
PYRO - H
SPECIFICATIONS
-
Applications : SiO2, Si3N4, Poly Silicon , doped(N+, P+) ploy Silicon.. deposition
Low stress nitride film
LTO/HTO deposition
Wet /Dry oxidation
Diffusion(N+, P+) , Drive-in
Anneal -
Substrate size : 4 to max. 8 inch wafer
-
Product yield : Max. 50 wafers/ run
-
Heater temperature : Max. 1,250℃
-
Heater control zone : 1 zone to 5 zone
-
Load station : Automatic loading/unloading by LM guide
-
Ultimate pressure : < 5.0E-3 Torr
-
Vacuum pump : Dry pump or Rotary pump
-
Control : PC control (UPRO software)
PYRO - H
SPECIFICATIONS
-
Applications : SiO2, Si3N4, Poly Silicon , doped(N+, P+) ploy Silicon.. deposition
Low stress nitride film
LTO/HTO deposition
Wet /Dry oxidation
Diffusion(N+, P+) , Drive-in
Anneal -
Substrate size : 4 to max. 8 inch wafer
-
Product yield : Max. 50 wafers/ run
-
Heater temperature : Max. 1,250℃
-
Heater control zone : 1 zone to 5 zone
-
Load station : Automatic loading/unloading by LM guide
-
Ultimate pressure : < 5.0E-3 Torr
-
Vacuum pump : Dry pump or Rotary pump
-
Control : PC control (UPRO software)
PYRO - B
SPECIFICATIONS
-
Applications : SiO2, Si3N4, Poly Silicon ,
Wet /Dry oxidation
Diffusion(N+, P+) , Drive-in
Anneal -
Substrate size : Piece to max. 4 inch wafer
-
Product yield : Max. 50 wafers/ run
-
Heater temperature : Max. 1,250℃
-
Heater control zone : 1 zone
-
Load station : Manual loading
-
Ultimate pressure : < 5.0E-3 Torr
-
Vacuum pump : Dry pump or Rotary pump
-
Control : PC control or Manual