Process : N+ doping
                P+ doping
                * SiO2 deposition & etching to prevent cross contamination

Substrate Size : Piece to Max. 6 inch

Plasma Source : ICP

Pulsed high voltage power to substrate : Output Voltage : - 500 ~ -5kV Pulse width : 10 ~ 100                                                                              [μsec] Output Frequency : 0 ~ 1 KHz

RF power : 600W @13.56Mhz

Ultimate pressure : < 5.0×10-6 Torr

Pump : Dry pump

Loadlock chamber : 1 wafer

Gas Supply : PH3, B2H6, Ar, CHF3 , SiH4, O2

Dose : 5 X 1012 cm-2 ~ 1 X 1014 cm-2

System control : PC control (full auto)

Dimension (w*d*h) : 1,860mm*850mm*2,000mm