RTP
HEMT TLM TEST
1,250℃ Heating Test
Anneal Hold Time Test : ≥ 35min @1,000℃
Fast cooling @ 800℃, Silicon wafer
Application
REAL RTP - 100
SPECIFICATIONS
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Application : Rapid Thermal Annealing (RTA)
Rapid Thermal Oxidation (RTO)
Rapid Thermal Nitridation (RTN)
Rapid Thermal Diffusion (RTD)
Ohmic Contact Annealing
Crystallization -
Product Sample : Si, Sapphire, Glass, Ceramic, etc.
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Substrate Size : 4inch
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Substrate Holder : Standard : Quartz (Pin) / Option : SiC coated graphite
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Temperature Range : 150~1,250℃
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Heating Rate : 10~200℃/sec for Silicon wafer 10~50℃/sec for Substrate on SiC coated graphite susceptor
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Control Zone : 1-Zone
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Temperature Uniformity : ≤ ±1.5% (@800℃, Silicon wafer) ≤ ±1.0% (@800℃, Substrate on SiC coated graphite susceptor)
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Temperature Accuracy : ≤ ±3℃
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Temperature Repeatability : ≤ ±3℃
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Vacuum : Standard : 5.0E-3 Torr / Option : 1.0E-6 Torr
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Gas Supply : 3 channels (Extensible)
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Option : Fast cooling (30sec from 800℃ to 50℃)
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Control : PC control
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Dimension (w*d*h) : 870mm*650mm*620mm
REAL RTP - 150
SPECIFICATIONS
-
Application : Rapid Thermal Annealing (RTA)
Rapid Thermal Oxidation (RTO)
Rapid Thermal Nitridation (RTN)
Rapid Thermal Diffusion (RTD)
Ohmic Contact Annealing
Crystallization -
Product Sample : Si, Sapphire, Glass, Ceramic, etc.
-
Substrate Size : 6inch
-
Substrate Holder : Standard : Quartz (Pin) / Option : SiC coated graphite
-
Temperature Range : 150~1,250℃
-
Heating Rate : 10~150℃/sec for Silicon wafer 10~40℃/sec for Substrate on SiC coated graphite susceptor
-
Control Zone : 3-Zone
-
Temperature Uniformity : ≤ ±1.5% (@800℃, Silicon wafer) ≤ ±1.0% (@800℃, Substrate on SiC coated graphite susceptor)
-
Temperature Accuracy : ≤ ±3℃
-
Temperature Repeatability : ≤ ±3℃
-
Vacuum : Standard : 5.0E-3 Torr / Option : 1.0E-6 Torr
-
Gas Supply : 5 channels (Extensible)
-
Option : Fast cooling (30sec from 800℃ to 50℃)
-
Control : PC control
-
Dimension (w*d*h) : 1,020mm*770mm*1,200mm
REAL RTP - 200
SPECIFICATIONS
-
Application : Rapid Thermal Annealing (RTA)
Rapid Thermal Oxidation (RTO)
Rapid Thermal Nitridation (RTN)
Rapid Thermal Diffusion (RTD)
Ohmic Contact Annealing
Crystallization -
Product Sample : Si, Sapphire, Glass, Ceramic, etc.
-
Substrate Size : 8inch
-
Substrate Holder : Standard : Quartz (Pin) / Option : SiC coated graphite
-
Temperature Range : 150~1,250℃
-
Heating Rate : 10~150℃/sec for Silicon wafer 10~40℃/sec for Substrate on SiC coated graphite susceptor
-
Control Zone : 3-Zone
-
Temperature Uniformity : ≤ ±1.5% (@800℃, Silicon wafer) ≤ ±1.0% (@800℃, Substrate on SiC coated graphite susceptor)
-
Temperature Accuracy : ≤ ±3℃
-
Temperature Repeatability : ≤ ±3℃
-
Vacuum : Standard : 5.0E-3 Torr / Option : 1.0E-6 Torr
-
Gas Supply : 5 channels (Extensible)
-
Option : Fast cooling (30sec from 800℃ to 50℃)
-
Control : PC control
-
Dimension (w*d*h) : 1,300mm*820mm*1,300mm
REAL RTP - MINI
SPECIFICATIONS
-
Application : Rapid Thermal Annealing (RTA)
Rapid Thermal Oxidation (RTO)
Rapid Thermal Nitridation (RTN)
Rapid Thermal Diffusion (RTD)
Ohmic Contact Annealing
Crystallization -
Product Sample : Si, Sapphire, Glass, Ceramic, etc.
-
Substrate Size : 8inch
-
Substrate Holder : Standard : Quartz (Pin) / Option : SiC coated graphite
-
Temperature Range : 150~1,200℃
-
Heating Rate : 10~50℃/sec
-
Control Zone : 1-Zone
-
Temperature Accuracy : ≤ ±3℃
-
Temperature Repeatability : ≤ ±3℃
-
Vacuum : Standard : ATM Option : 5.0E-3 Torr
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Gas Supply : Option : Up to 3 process gas lines with digital MFC or Flow meter
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Control : Manual control by Push Button (Include USB communication port)
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Dimension (w*d*h) : 1,300mm*820mm*1,300mm
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Weight : 25kg to 55Kg